COE Scholarly Publication : [2844] Collection home page

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Collection's Items (Sorted by Submit Date in Descending order): 2681 to 2700 of 2844
Issue DateTitleAuthor(s)
2013Responsivity optimization of a MQW SOI-based lateral PIN photodiode using Taguchi's L27 orthogonal arrayMenon, P.S. ; Tasirin, S.K. ; Ahmad, I. ; Abdullah, S.F. ; Apte, P.R. 
2014Effect of process parameter variability on the threshold voltage of downscaled 22nm PMOS using taguchi methodMaheran, A.H.A. ; Menon, P.S. ; Shaari, S. ; Kalaivani, T. ; Ahmad, I. ; Faizah, Z.A.N. ; Apte, P.R. 
2014Study of the effect of WO3 and Bi2O3 on the microstructure and electrical properties of a TiO2 based varistorKothandapani, Z. ; Begum, S. ; Ahmad, I. ; Daud, I.R. ; Gholizadeh, S. 
2014Reflow soldering process for Sn3.5Ag solder on ENIG using rapid thermal processing systemAdhila Muhammad, N. ; Bais, B. ; Ahmad, I. 
2014Application of Taguchi method in designing a 22nm high-k/metal gate NMOS transistorAfifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Shaari, S. 
2014Optimisation of process parameters for lower leakage current in 22 nm n-type MOSFET device using Taguchi methodAfifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Shaari, S. 
2014Effect of Halo structure variations on the threshold voltage of a 22 nm gate length NMOS transistorAfifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Shaari, S. 
2014Wide wavelength range and high speed SiGe/Si multi quantum-well silicon-on-insulator-based lateral PIN photodiodeMenon, P.S. ; Tasirin, S.K. ; Ahmad, I. ; Abdullah, S.F. 
2014Taguchi optimization of a SiGe/Si quantum dot SOI-based lateral PIN photodiodeMenon, P.S. ; Tasirin, S.K. ; Ahmad, I. ; Abdullah, S.F. 
2014Analysis of threshold voltage variance in 45nm n-channel device using L27 orthogonal array methodSalehuddin, F. ; Mohd Zain, A.S. ; Idris, N.M. ; Mat Yamin, A.K. ; Abdul Hamid, A.M. ; Ahmad, I. ; Menon, P.S. 
2014Effects of high-K dielectrics with metal gate for electrical characteristics of 18nm NMOS deviceAtan, N.B. ; Ahmad, I.B. ; Majlis, B.B.Y. 
2015Taguchi modeling of process parameters in vdg-mosfet device for higher ION/IOFF ratioKaharudin, K.E. ; Salehuddin, F. ; Hamidon, A.H. ; Aziz, M.N.I.A. ; Ahmad, I. 
2015Development of process parameters for 22 nm PMOS using 2-D analytical modelingMaheran, A.H.A. ; Menon, P.S. ; Ahmad, I. ; Shaari, S. ; Faizah, Z.A.N. 
2015Influence of process parameters on threshold voltage and leakage current in 18nm NMOS deviceAtan, N.B. ; Ahmad, I.B. ; Majlis, B.B.Y. ; Fauzi, I.B.A. 
2015Statistical optimization of process parameters for threshold voltage in 22 nm p-Type MOSFET using Taguchi methodMaheran, A.H.A. ; Menon, P.S. ; Shaari, S. ; Ahmad, I. ; Faizah, Z.A.N. 
2015Determination of impact damage severity level in Sheet Molding Compound composite material using thermography method - A preliminary studyMohamed, A.A. ; Disele, T.L. ; Ahmad, I. ; Mohd, S. 
2016Electrical characterization of different high-k dielectrics with tungsten silicide in vertical double gate nmos structureKaharudin, K.E. ; Salehuddin, F. ; Soin, N. ; Zain, A.S.M. ; Aziz, M.N.I.A. ; Ahmad, I. 
2016Process parameters optimization of 14nm p-type MOSFET using 2-D analytical modelingNoor Faizah, Z.A. ; Ahmad, I. ; Ker, P.J. ; Siti Munirah, Y. ; Mohd Firdaus, R. ; Mah, S.K. ; Menon, P.S. 
2016Optimization of process parameter variations on threshold voltage in Ultrathin Pillar Vertical Double Gate MOSFET DeviceKaharudin, K.E. ; Hamidon, A.H. ; Salehuddin, F. ; Ifwat Abd Aziz, M.N. ; Ahmad, I. 
2016Variability analysis of process parameters on subthreshold swing in vertical DG-MOSFET deviceKaharudin, K.E. ; Salehuddin, F. ; Hamidon, A.H. ; Zain, A. ; Abd Aziz, M.N.I. ; Ahmad, I. 
Collection's Items (Sorted by Submit Date in Descending order): 2681 to 2700 of 2844