Collection's Items (Sorted by Submit Date in Descending order): 2681 to 2700 of 2844
| Issue Date | Title | Author(s) |
| 2013 | Responsivity optimization of a MQW SOI-based lateral PIN photodiode using Taguchi's L27 orthogonal array | Menon, P.S. ; Tasirin, S.K. ; Ahmad, I. ; Abdullah, S.F. ; Apte, P.R. |
| 2014 | Effect of process parameter variability on the threshold voltage of downscaled 22nm PMOS using taguchi method | Maheran, A.H.A. ; Menon, P.S. ; Shaari, S. ; Kalaivani, T. ; Ahmad, I. ; Faizah, Z.A.N. ; Apte, P.R. |
| 2014 | Study of the effect of WO3 and Bi2O3 on the microstructure and electrical properties of a TiO2 based varistor | Kothandapani, Z. ; Begum, S. ; Ahmad, I. ; Daud, I.R. ; Gholizadeh, S. |
| 2014 | Reflow soldering process for Sn3.5Ag solder on ENIG using rapid thermal processing system | Adhila Muhammad, N. ; Bais, B. ; Ahmad, I. |
| 2014 | Application of Taguchi method in designing a 22nm high-k/metal gate NMOS transistor | Afifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Shaari, S. |
| 2014 | Optimisation of process parameters for lower leakage current in 22 nm n-type MOSFET device using Taguchi method | Afifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Shaari, S. |
| 2014 | Effect of Halo structure variations on the threshold voltage of a 22 nm gate length NMOS transistor | Afifah Maheran, A.H. ; Menon, P.S. ; Ahmad, I. ; Shaari, S. |
| 2014 | Wide wavelength range and high speed SiGe/Si multi quantum-well silicon-on-insulator-based lateral PIN photodiode | Menon, P.S. ; Tasirin, S.K. ; Ahmad, I. ; Abdullah, S.F. |
| 2014 | Taguchi optimization of a SiGe/Si quantum dot SOI-based lateral PIN photodiode | Menon, P.S. ; Tasirin, S.K. ; Ahmad, I. ; Abdullah, S.F. |
| 2014 | Analysis of threshold voltage variance in 45nm n-channel device using L27 orthogonal array method | Salehuddin, F. ; Mohd Zain, A.S. ; Idris, N.M. ; Mat Yamin, A.K. ; Abdul Hamid, A.M. ; Ahmad, I. ; Menon, P.S. |
| 2014 | Effects of high-K dielectrics with metal gate for electrical characteristics of 18nm NMOS device | Atan, N.B. ; Ahmad, I.B. ; Majlis, B.B.Y. |
| 2015 | Taguchi modeling of process parameters in vdg-mosfet device for higher ION/IOFF ratio | Kaharudin, K.E. ; Salehuddin, F. ; Hamidon, A.H. ; Aziz, M.N.I.A. ; Ahmad, I. |
| 2015 | Development of process parameters for 22 nm PMOS using 2-D analytical modeling | Maheran, A.H.A. ; Menon, P.S. ; Ahmad, I. ; Shaari, S. ; Faizah, Z.A.N. |
| 2015 | Influence of process parameters on threshold voltage and leakage current in 18nm NMOS device | Atan, N.B. ; Ahmad, I.B. ; Majlis, B.B.Y. ; Fauzi, I.B.A. |
| 2015 | Statistical optimization of process parameters for threshold voltage in 22 nm p-Type MOSFET using Taguchi method | Maheran, A.H.A. ; Menon, P.S. ; Shaari, S. ; Ahmad, I. ; Faizah, Z.A.N. |
| 2015 | Determination of impact damage severity level in Sheet Molding Compound composite material using thermography method - A preliminary study | Mohamed, A.A. ; Disele, T.L. ; Ahmad, I. ; Mohd, S. |
| 2016 | Electrical characterization of different high-k dielectrics with tungsten silicide in vertical double gate nmos structure | Kaharudin, K.E. ; Salehuddin, F. ; Soin, N. ; Zain, A.S.M. ; Aziz, M.N.I.A. ; Ahmad, I. |
| 2016 | Process parameters optimization of 14nm p-type MOSFET using 2-D analytical modeling | Noor Faizah, Z.A. ; Ahmad, I. ; Ker, P.J. ; Siti Munirah, Y. ; Mohd Firdaus, R. ; Mah, S.K. ; Menon, P.S. |
| 2016 | Optimization of process parameter variations on threshold voltage in Ultrathin Pillar Vertical Double Gate MOSFET Device | Kaharudin, K.E. ; Hamidon, A.H. ; Salehuddin, F. ; Ifwat Abd Aziz, M.N. ; Ahmad, I. |
| 2016 | Variability analysis of process parameters on subthreshold swing in vertical DG-MOSFET device | Kaharudin, K.E. ; Salehuddin, F. ; Hamidon, A.H. ; Zain, A. ; Abd Aziz, M.N.I. ; Ahmad, I. |
Collection's Items (Sorted by Submit Date in Descending order): 2681 to 2700 of 2844