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Issue Date	Title	Author(s)
2010	Numerical study of fluid flow and heat transfer in microchannel heat sinks using anisotropic porous media approximation	Lim, F.Y. ; Abdullah, S. ; Ahmad, I.
2010	Characterization and optimizations of silicide thickness in 45nm pMOS device	Salehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A.
2010	A study for optimum productivity yield in 0.16μm mixed of wafer fabrication facility	Chik, M.A. ; Yung, V.C. ; Balakrishna, P. ; Hashim, U. ; Ahmad, I. ; Mohamad, B.
2010	Analyze and optimize the silicide thickness in 45nm CMOS technology using Taguchi method	Salehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A.
2010	Characterization of fabrication process noises for 32nm NMOS devices	Elgomati, H.A. ; Majlis, B.Y. ; Ahmad, I. ; Ziad, T.
2010	Characterization of a submicron PMOS in mixer circuits	Yeap, K.H. ; Ahmad, I. ; Rizman, Z.I. ; Chew, K. ; Chong, K.H. ; Yong, Y.T.
2010	Impact of HALO structure on threshold voltage and leakage current in 45nm NMOS device	Salehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A.
2010	Effect of process parameter variations on threshold voltage in 45nm NMOS device	Salehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A.
2011	Effects of different catalytic activation techniques on the thermal performance of flip chip heat spreader	Lim, V. ; Amin, N. ; Foong, C.S. ; Ahmad, I. ; Zaharim, A. ; Rasid, R. ; Jalar, A.
2011	Influence of HALO and source/drain implantation on threshold voltage in 45nm PMOS device	Salehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A.
2011	Optimization of HALO structure effects in 45nm p-type MOSFETs device using taguchi method	Salehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A. ; Elgomati, H.A. ; Majlis, B.Y. ; Apte, P.R.
2011	Optimization of process parameter variability in 45 nm PMOS device using Taguchi method	Salehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A.
2011	Application of Taguchi method in the optimization of process variation for 32nm CMOS technology	Elgomati, H.A. ; Majlis, B.Y. ; Ahmad, I. ; Salehuddin, F. ; Hamid, F.A. ; Zaharim, A. ; Apte, P.R.
2011	Statistical optimization for process parameters to reduce variability of 32 nm PMOS transistor threshold voltage	Elgomati, H.A. ; Majlis, B.Y. ; Ahmad, I. ; Salehuddin, F. ; Hamid, F.A. ; Zaharim, A. ; Mohamad, T.Z. ; Apte, P.R.
2011	Optimizing 35nm NMOS devices V TH and I LEAK by controlling active area and halo implantation dosage	Elgomati, H.A. ; Majlis, B.Y. ; Salehuddin, F. ; Ahmad, I. ; Zaharim, A. ; Hamid, F.A.
2011	Optimization of input process parameters variation on threshold voltage in 45 nm NMOS device	Salehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A. ; Hashim, U. ; Apte, P.R.
2011	Cobalt silicide and titanium silicide effects on nano devices	Elgomati, H.A. ; Majlis, B.Y. ; Salehuddin, F. ; Ahmad, I. ; Zaharim, A. ; Hamid, F.A.
2011	Analyze of input process parameter variation on threshold voltage in 45nm n-channel MOSFET	Salehuddin, F. ; Ahmad, I. ; Hamid, F.A. ; Zaharim, A. ; Elgomati, H.A. ; Majlis, B.Y.
2011	Nanoindentation characterization of Sn-Ag-Sb/Cu substrate IMC Layer subject to thermal aging	Shualdi, W. ; Bais, B. ; Ahmad, I. ; Omar, G. ; Isnin, A.
2011	Throughput improvement in semiconductor fabrication for 0.13μm technology	Balakrishna, P. ; Chik, M.A. ; Ahmad, I. ; Mohamad, B.